FDS6993 Fairchild Semiconductor, FDS6993 Datasheet - Page 7

• Manufacturer Part Number: FDS6993
• Description: MOSFET P-CH DUAL 30/12V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6993

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V, 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 6.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 30 V, + 12 V
• Gate-source Breakdown Voltage: +/- 25 V, +/- 8 V
• Continuous Drain Current: 4.3 A, - 6.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2
0.01
100
0.1
10
10
1
8
6
4
2
0
Figure 20. Maximum Safe Operating Area.
0.1
Figure 18. Gate Charge Characteristics.
0
0.001
0.01
R
SINGLE PULSE
R
0.1
DS(ON)
0.0001
V
1
JA
I
T
D
GS
A
= 135
= -6.8A
= 25
10
= -4.5V
LIMIT
D = 0.5
o
o
C
C/W
0.2
0.05
-V
0.1
0.02
DS
20
DC
0.01
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
V
1
Q
10s
DS
g
0.001
, GATE CHARGE (nC)
= -4V
1s
30
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
-6V
Figure 22. Transient Thermal Response Curve.
10ms
40
-8V
1ms
10
0.01
100 s
50
60
0.1
100
70
t
1
, TIME (sec)
4200
3500
2800
2100
1400
700
50
40
30
20
10
0
0
0.001
Figure 19. Capacitance Characteristics.
1
0
Figure 21. Single Pulse Maximum
C
0.01
rss
-V
Power Dissipation.
DS
3
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
oss
t
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
6
1
T
R
J
R
- T
JA
100
JA
(t) = r(t) * R
C
A
t
= 135
iss
1
= P * R
t
2
10
o
C/W
SINGLE PULSE
R
JA
9
1
JA
JA
T
(t)
/ t
A
= 135°C/W
2
f = 1 MHz
V
= 25°C
FDS6993 Rev C (W)
100
GS
1000
= 0 V
1000
12