FDS6993 Fairchild Semiconductor, FDS6993 Datasheet - Page 5

• Manufacturer Part Number: FDS6993
• Description: MOSFET P-CH DUAL 30/12V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6993

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 30V, 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 6.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohms
• Drain-source Breakdown Voltage: - 30 V, + 12 V
• Gate-source Breakdown Voltage: +/- 25 V, +/- 8 V
• Continuous Drain Current: 4.3 A, - 6.8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q1
0.01
100
Figure 9. Maximum Safe Operating Area.
0.001
0.1
10
10
0.01
Figure 7. Gate Charge Characteristics.
1
8
6
4
2
0
0.1
0.1
0.0001
0
1
R
SINGLE PULSE
R
DS(ON)
V
JA
T
I
D
GS
A
= 135
D = 0.5
= -4.3A
= 25
LIMIT
= -10V
0.2
2
0.1
0.05
0.02
o
o
C
0.01
C/W
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.001
1
SINGLE PULSE
4
Q
g
, GATE CHARGE (nC)
DC
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
10s
V
DS
Figure 11. Transient Thermal Response Curve.
1s
= -10V
6
100ms
-15V
0.01
10ms
10
8
1ms
-20V
100 s
10
0.1
100
t
12
1
, TIME (sec)
50
40
30
20
10
0
0.001
700
600
500
400
300
200
100
1
Figure 8. Capacitance Characteristics.
0
0
Figure 10. Single Pulse Maximum
C
rss
0.01
5
Power Dissipation.
-V
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
1
, TIME (sec)
P(pk)
1
Duty Cycle, D = t
T
R
15
J
R
JA
- T
100
JA
(t) = r(t) * R
t
A
1
= 135
t
= P * R
2
C
10
iss
20
o
SINGLE PULSE
R
C/W
JA
T
JA
1
A
= 135°C/W
JA
(t)
/ t
= 25°C
FDS6993 Rev C (W)
100
2
f = 1 MHz
V
GS
1000
25
= 0 V
1000
30