FDC6322C Fairchild Semiconductor, FDC6322C Datasheet

MOSFET N/P-CH DUAL 25V SSOT-6

FDC6322C

Manufacturer Part Number
FDC6322C
Description
MOSFET N/P-CH DUAL 25V SSOT-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDC6322C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA, 460mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6322C
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDC6322C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 1997 Fairchild Semiconductor Corporation
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
FDC6322C
Dual N & P Channel , Digital FET
General Description
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
R
D
Absolute Maximum Ratings
J
DSS
GSS
, I
D
,T
JA
J
C
O
STG
SOT-23
, V
, V
CC
IN
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage,
Drain/Output Current
Maximum Power Dissipation
Operating and Storage Tempature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SuperSOT
Mark: .322
TM
-6
- Continuous
- Pulsed
T
A
= 25
o
SuperSOT
C unless other wise noted
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TM
-8
Features
N-Ch 25 V, 0.22 A, R
P-Ch 25 V, -0.46 A, R
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
SO-8
N-Channel
0.22
0.5
25
8
4
6
5
0.7
-55 to 150
140
0.9
60
6
SOT-223
DS(ON)
DS(ON)
GS(th)
= 5
= 1.5
P-Channel
< 1.5 V.
-0.46
-25
-8
-1
@ V
@ V
November 1997
GS
3
2
1
= 2.7 V.
GS
= -2.7 V.
SOIC-16
FDC6322C.Rev B1
Units
°C/W
°C/W
kV
W
°C
V
V
A

Related parts for FDC6322C

FDC6322C Summary of contents

Page 1

... Replace NPN & PNP digital transistors. TM SO-8 SuperSOT - unless other wise noted A N-Channel 25 0.22 0.5 (Note 1a) (Note 1b) (Note 1a) (Note 1) November 1997 = 2.7 V. DS(ON 1 -2.7 V. DS(ON) GS < 1.5 V. GS(th) SOIC-16 SOT-223 P-Channel - -0.46 -1 0.9 0.7 -55 to 150 6 140 60 Units °C kV °C/W °C/W FDC6322C.Rev B1 ...

Page 2

... P-Ch -0.65 -0.86 -1.5 N-Ch 3 =125°C 6 3.1 4 P-Ch 1.22 1.5 1.65 2.4 T =125°C J 0.87 1.1 N-Ch 0.2 P-Ch -0.5 N-Ch 0.2 P-Ch 0.8 N-Ch 9.5 P-Ch 62 N-Ch 6 P-Ch 35 N-Ch 1.3 P-Ch 9.5 FDC6322C.Rev B1 Units µA µ ...

Page 3

... C 0.005 in of pad of 2oz copper. Type Min Typ Max Units N- P- N- N- N-Ch 0.49 0.7 nC P-Ch 1 1.5 N-Ch 0.22 nC P-Ch 0.32 N-Ch 0.07 nC P-Ch 0.25 N-Ch 0.5 A P-Ch -0.5 N-Ch 0.97 1.3 V P-Ch -0.88 -1.2 is guaranteed by JC FDC6322C.Rev B1 ...

Page 4

... DRAIN CURRENT (A) D Drain Current and Gate Voltage 0.2A D 25°C 125°C 2 GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC6322C.Rev B1 0.5 4 1.2 ...

Page 5

... Figure 9. Maximum Safe Operating Area. (continued 0. iss 3 C oss rss Figure 8. Gate Charge Characteristics 0. Figure 10. Single Pulse Maximum Power 10V 15V 0.1 0.2 0.3 0.4 0 GATE CHARGE (nC SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. FDC6322C.Rev B1 0.6 100 300 ...

Page 6

... DRAIN CURRENT (A) D Drain Current and Gate Voltage -0.5A 25°C D 125°C -1.5 -2 -2 GATE TO SOURCE VOLTAGE ( 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC6322C.Rev B1 -1 -4.5 -5 1.2 ...

Page 7

... Figure 20. Single Pulse Maximum Power 0.01 0 TIME (sec -2.7V GS SINGLE PULSE = See Note 25° 0.2 0 DRAIN-SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 FDC6322C.Rev 100 300 300 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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