FDC6322C Fairchild Semiconductor, FDC6322C Datasheet - Page 4

• Manufacturer Part Number: FDC6322C
• Description: MOSFET N/P-CH DUAL 25V SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics: N-Channel
0.15
0.05
0.2
0.1
0.5
0.4
0.3
0.2
0.1
0
0
0.5
Figure 5. Transfer Characteristics.
1.8
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation
0
1
-50
V
Figure 1. On-Region Characteristics.
DS
V
I = 0.2A
D
GS
= 5.0V
-25
= 2.7 V
0.5
with Temperature.
V
GS
1
V
DS
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
0
V
J
GS
, DRAIN-SOURCE VOLTAGE (V)
1
= 4.5V
25
1.5
1.5
50
4.0
T = -55°C
J
3.5
3.0
75
2
2.7
2
25°C
2.5
100
2.5
2.0
125°C
125
1.5
2.5
3
150
0.0001
15
12
0.001
1.4
1.2
0.8
0.6
9
6
3
0
0.01
1
2
0.5
0.2
0.1
Figure 2. On-Resistance Variation with
Figure 4. On Resistance Variation with
0
0.2
Figure 6. Body Diode Forward Voltage
V
V
GS
Drain Current and Gate Voltage.
Variation with Source Current and
GS
= 2.0V
25°C
= 0V
0.1
V
0.4
2.5
V
SD
GS
125°C
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
I
D
2.5
, DRAIN CURRENT (A)
T = 125°C
0.2
J
0.6
Gate-To- Source Voltage.
2.7
3
Temperature.
25°C
3.0
-55°C
0.3
0.8
3.5
3.5
4.0
I
D
0.4
FDC6322C.Rev B1
1
= 0.2A
4.5
1.2
4
0.5