FDC6322C Fairchild Semiconductor, FDC6322C Datasheet - Page 7

• Manufacturer Part Number: FDC6322C
• Description: MOSFET N/P-CH DUAL 25V SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics: P-Channel (continued)
150
100
5
4
3
2
1
0
60
40
20
10
Figure 17. Gate Charge Characteristics
Figure 19. Capacitance Characteristics.
0
5
0.1
f = 1 MHz
V
I = -0.25A
GS
D
0.05
0.02
0.01
= 0 V
0.5
0.2
0.1
0.2
0.2
0.0001
1
-V
DS
D = 0.5
0.4
0.2
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0.1
0.05
0.02
0.01
Single Pulse
Q
g
, GATE CHARGE (nC)
0.6
1
0.001
Figure 21. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
2
0.8
V
DS
= 5V
1
5
10V
15V
.
0.01
10
1.2
C oss
C iss
C rss
1.4
25
0.1
t , TIME (sec)
1
0.03
0.01
0.3
0.1
5
4
3
2
1
0
0.01
2
1
0.1
Figure 18. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power
R
0.2
1
SINGLE PULSE
A
JA
V
T
= See Note 1b
GS
A
0.1
= 25°C
= -2.7V
- V
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
Dissipation.
1
T - T
Duty Cycle, D = t / t
10
J
R
1
R
JA
t
1
A
JA
2
(t) = r(t) * R
t
= P * R
2
= See Note 1b
5
R
10
JA
1
SINGLE PULSE
JA
(t)
JA
2
100
T = 25°C
=See note 1b
A
10 15
FDC6322C.Rev B1
100
300
25 35
300