FDC6322C Fairchild Semiconductor, FDC6322C Datasheet - Page 6

• Manufacturer Part Number: FDC6322C
• Description: MOSFET N/P-CH DUAL 25V SSOT-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6322C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 460mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics: P-Channel
-0.75
-0.25
-1.25
-0.75
-0.25
-0.5
-1.5
-0.5
-1
Figure 13. On-Resistance Variation
0
-0.5
-1
1.6
1.4
1.2
0.8
0.6
0
1
0
-50
Figure 15. Transfer Characteristics.
Figure 11. On-Region Characteristics.
V
GS
V
DS
V
I = -0.25A
D
= -4.5V
GS
-25
= -5V
-1
= -2.7V
with Temperature.
-1
V
GS
V
DS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
J
-3.5
, DRAIN-SOURCE VOLTAGE (V)
-1.5
-3.0
-2
25
-2.7
T
J
= -55°C
50
-2.5
-2
-3
-2.0
75
25°C
125°C
-2.5
100
-1.5
-4
125
-3
-5
150
0.0001
5
4
3
2
1
0
-1.6
-1.4
-1.2
-0.8
-0.6
-1
0.01
-1
0.5
0.1
Figure 14. On Resistance Variation with
Figure 12. On-Resistance Variation with
Figure 16. Body Diode Forward Voltage
0
0
V
GS
Variation with Source Current and
-1.5
Drain Current and Gate Voltage.
V
= -2.0 V
GS
25°C
= 0V
0.2
-0.2
-V
V
-2
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
125°C
I
0.4
D
-2.5
, DRAIN CURRENT (A)
-0.4
-2.5
T = 125°C
J
-3
-2.7
0.6
Temperature.
25°C
-3.0
-0.6
-55°C
-3.5
-3.5
0.8
-4.0
-4
I = -0.5A
-0.8
D
FDC6322C.Rev B1
1
-4.5
-4.5
1.2
-1
-5