FDW2512NZ Fairchild Semiconductor, FDW2512NZ Datasheet - Page 3

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FDW2512NZ

Manufacturer Part Number
FDW2512NZ
Description
MOSFET N-CH DUAL 20V 6A 8-TSSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDW2512NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
670pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW2512NZ
Manufacturer:
SILICONI
Quantity:
450
Part Number:
FDW2512NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDW2512NZ Rev. A1
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. R
3. The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4
t
t
t
t
t
t
V
t
Q
ON
d(ON)
r
d(OFF)
f
OFF
rr
SD
RR
JA
JA
is 114
is 77
o
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
o
C/W (steady state) when mounted on a 1 inch
C/W (steady state) when mounted on a mininum copper pad on FR-4.
(V
GS
= 4.5V)
2
copper pad on FR-4.
V
V
I
I
I
SD
SD
SD
GS
DD
= 1.3A
= 6.0A, dI
= 6.0A, dI
= 10V, I
= 4.5V, R
3
D
SD
SD
= 6.0A
GS
/dt = 100A/ s
/dt = 100A/ s
= 16
-
-
-
-
-
-
-
-
-
0.7
57
47
58
8
-
-
-
-
www.fairchildsemi.com
158
1.2
98
24
13
-
-
-
-
nC
ns
ns
ns
ns
ns
ns
ns
V

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