FDW2512NZ Fairchild Semiconductor, FDW2512NZ Datasheet - Page 9

• Manufacturer Part Number: FDW2512NZ
• Description: MOSFET N-CH DUAL 20V 6A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2512NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 670pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDW2512NZ Rev. A1
SABER Electrical Model
REV July 2004
template fdw2512nz n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 7.3e-12, nl=0.93, rs = 20.6e-3, trs1 = 1.7e-3, trs2 = 2e-6, xti=0.2, cjo = 2.0e-10, ikf=0.2, tt = 1.05e-8,
m = 0.58, tikf=0.001)
dp..model dbreakmod = (rs = 1e-1, trs1 = 9e-3, trs2 = -2.0e-5)
dp..model dplcapmod = (cjo = 0.37e-9, isl=10e-30, nl=10, m=0.51)
dp..model desd1mod = (bv=14, rs=1)
dp..model desd2mod = (bv=14, nl=1.3, rs=1)
m..model mmedmod = (type=_n, vto = 0.96, kp=1.98, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 1.2, kp = 72, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 0.72, kp = 0.02, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -1.5)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -5 )
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.4, voff = 0.4)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.4)
c.ca n12 n8 = 8.8e-10
c.cb n15 n14 = 8.8e-10
c.cin n6 n8 = 0.5e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
dp.desd1 n91 n9 = model=desd1mod
dp.desd2 n91 n7 = model=desd2mod
spe.ebreak n11 n7 n17 n18 = 22.2
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 1.49e-9
l.lsource n3 n7 = 0.2e-9
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 14.9
res.rlsource n3 n7 = 2.0
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 6e-4, tc2 = -5e-7
res.rdrain n50 n16 = 13.1e-3, tc1 = 6e-4, tc2 = 1.2e-5
res.rgate n9 n20 = 5.57
res.rslc1 n5 n51= 1e-6, tc1 = 1e-9, tc2 =1e-8
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 2e-4, tc1 = 8.2e-2, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.0e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -13e-4, tc2 = -2.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5))
}
}
GATE
1
RLGATE
LGATE
9
RGATE
CA
DESD1
91
DESD2
12
20
9
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
8
RSOURCE
DBREAK
IT
MWEAK
17
EBREAK
RVTHRES
RBREAK
11
+
-
17
18
7
www.fairchildsemi.com
+
-
18
22
RVTEMP
19
RLSOURCE
RLDRAIN
LSOURCE
VBAT
DBODY
LDRAIN
SOURCE
DRAIN
2
3