FDW2512NZ Fairchild Semiconductor, FDW2512NZ Datasheet - Page 6

• Manufacturer Part Number: FDW2512NZ
• Description: MOSFET N-CH DUAL 20V 6A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2512NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 670pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDW2512NZ Rev. A1
Typical Characteristic
Breakdown Voltage vs Junction Temperature
1.10
1.05
1.00
0.95
Figure 11. Normalized Drain to Source
-80
I
D
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
Figure 13. Gate Charge Waveforms for Constant Gate Currents
0
40
4.5
3.0
1.5
0
(Continued) T
0
80
V
DD
o
C)
= 10V
120
2
A
= 25°C unless otherwise noted
Qg, GATE CHARGE (nC)
160
4
6
1000
WAVEFORMS IN
DESCENDING ORDER:
200
Figure 12. Capacitance vs Drain to Source
70
6
I
I
0.1
D
D
= 1A
= 6A
V
GS
= 0V, f = 1MHz
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Voltage
10
1
C
ISS
C
RSS
= C
C
= C
GS
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OSS
+ C
GD
GD
C
DS
10
+ C
GD
20