FDW2521C Fairchild Semiconductor, FDW2521C Datasheet

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FDW2521C

Manufacturer Part Number
FDW2521C
Description
MOSFET N/P 20V 5.5/2.8A 8-TSSOP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDW2521C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.5A, 3.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1082pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW2521C
Manufacturer:
PULSE
Quantity:
11 200
FDW2521C
Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
Symbol
D
DC/DC conversion
Power management
Load switch
J
DSS
GSS
D
, T
JA
Device Marking
STG
2521C
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
FDW2521C
- Continuous
- Pulsed
Device
Parameter
Pin 1
T
A
= 25°C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
Q1: N-Channel
5.5 A, 20 V.
Q2: P-Channel
–3.8 A, 20 V. R
High performance trench technology for extremely
low R
Low profile TSSOP-8 package
DS(ON)
1
2
3
4
Q1
5.5
20
30
12
Tape width
Q1
12mm
-55 to +150
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
125
208
1.0
0.6
= 43 m
= 21 m
= 35 m
= 70 m
Q2
–3.8
Q2
–20
–30
12
8
7
6
5
@ V
@ V
@ V
@ V
GS
GS
GS
GS
FDW2521C Rev D1(W)
2500 units
July 2008
Quantity
= –4.5 V
= 4.5 V
= 2.5 V
= –2.5 V
Units
C/W
W
V
V
A
C

Related parts for FDW2521C

FDW2521C Summary of contents

Page 1

... Reel Size Tape width 13’’ 12mm July 2008 4.5 V DS(ON 2.5 V DS(ON –4.5 V DS(ON –2.5 V DS(ON Units – –3.8 A –30 1.0 W 0.6 C 125 C/W 208 Quantity 2500 units FDW2521C Rev D1(W) ...

Page 2

... GEN – –3.8 A,V = –4 Type Min Typ Max Units – mV – –1 Q1 +100 nA Q2 +100 Q1 0.6 0.8 1 –0.6 –1.0 –1.5 Q1 –3 – 13.2 Q1 1082 pF Q2 1030 Q1 277 pF Q2 280 Q1 130 pF Q2 120 9 2 2.4 FDW2521C Rev D1(W) ...

Page 3

... C/W (steady state) when mounted on a minimum copper pad on FR- Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% (continued 25°C unless otherwise noted A Test Conditions 0.83 A (Note –0.83 A (Note determined by the user's board design. CA Type Min Typ Max Units Q1 0. –0.83 Q1 0.7 1 –0.7 –1.2 FDW2521C Rev D1(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2521C Rev D1( 1.2 ...

Page 5

... Figure 8. Capacitance Characteristics. 50 1ms 100 0.001 0.01 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 250°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. FDW2521C Rev D1(W) ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2521C Rev D1(W) 5 1.4 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 250°C 25° TIME (sec) 1 Power Dissipation. R ( 250 °C/W JA P(pk ( Duty Cycle 100 FDW2521C Rev D1(W) 20 100 2 1000 ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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