FDW2521C Fairchild Semiconductor, FDW2521C Datasheet - Page 5

• Manufacturer Part Number: FDW2521C
• Description: MOSFET N/P 20V 5.5/2.8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2521C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q1
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
R
I
D
SINGLE PULSE
DS(ON)
R
= 5.5A
V
JA
T
2
GS
A
= 250
LIMIT
= 25
= 4.5V
o
o
C/W
C
V
4
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
, GATE CHARGE (nC)
DC
6
10s
1s
100ms
8
V
DS
10ms
= 5V
10
10
1ms
15V
12
10V
100
14
1800
1500
1200
50
40
30
20
10
900
600
300
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.01
4
V
Power Dissipation.
C
DS
ISS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
t
1
8
, TIME (sec)
1
C
OSS
12
10
C
RSS
SINGLE PULSE
R
JA
T
FDW2521C Rev D1(W)
A
16
100
= 250°C/W
= 25°C
V
f = 1MHz
GS
= 0 V
1000
20