FDW2521C Fairchild Semiconductor, FDW2521C Datasheet - Page 4

• Manufacturer Part Number: FDW2521C
• Description: MOSFET N/P 20V 5.5/2.8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2521C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q1
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.5
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
0
Figure 1. On-Region Characteristics.
1
-50
V
Figure 5. Transfer Characteristics.
DS
= 5V
V
V
I
D
GS
GS
3.5V
= 5.5A
0.5
-25
= 4.5V
= 4.5V
1
V
GS
V
, GATE TO SOURCE VOLTAGE (V)
DS
T
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
2.5V
1
3.0V
1.5
25
T
A
= -55
1.5
50
o
C
2
75
2
125
2.0V
o
100
o
C
C)
2.5
25
o
2.5
C
125
150
3
3
Figure 6. Body Diode Forward Voltage Variation
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
0
0.01
100
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
2.5
1.5
0.5
1
10
1
2
1
0
0
Drain Current and Gate Voltage.
V
GS
= 0V
Gate-to-Source Voltage.
V
0.2
GS
V
5
SD
V
= 2.0V
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
T
, GATE TO SOURCE VOLTAGE (V)
A
A
= 25
= 125
0.4
10
I
D
o
, DRAIN CURRENT (A)
C
2.5V
o
C
3.0V
3
0.6
25
15
T
125
A
o
C
=
o
C
3.5V
-55
0.8
o
20
C
4.0V
4
FDW2521C Rev D1(W)
I
D
1
25
= 2.8 A
4.5V
1.2
30
5