FDW2521C Fairchild Semiconductor, FDW2521C Datasheet - Page 7

• Manufacturer Part Number: FDW2521C
• Description: MOSFET N/P 20V 5.5/2.8A 8-TSSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2521C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1082pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics: Q2
0.01
5
4
3
2
1
0
100
Figure 19. Maximum Safe Operating Area.
0.1
10
0
Figure 17. Gate Charge Characteristics.
1
0.01
0.001
0.01
I
D
R
SINGLE PULSE
0.1
R
= -3.8A
DS(ON)
0.0001
V
1
JA
T
GS
A
= 250
= 25
= -4.5V
LIMIT
o
o
C
C/W
3
0.1
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
g
0.2
, GATE CHARGE (nC)
0.1
0.05
0.02
0.001
0.01
6
SINGLE PULSE
1
DC
Figure 21. Transient Thermal Response Curve.
10s
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
1s
100ms
DS
= -5V
10ms
10
0.01
1ms
9
100 s
-15V
-10V
100
12
0.1
t
1
, TIME (sec)
20
15
10
1800
1500
1200
5
0
900
600
300
0.01
Figure 18. Capacitance Characteristics.
0
0
Figure 20. Single Pulse Maximum
1
C
ISS
0.1
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
t
C
10
1
, TIME (sec)
OSS
1
10
C
RSS
P(pk)
Duty Cycle, D = t
T
R
SINGLE PULSE
R
R
J
JA
- T
JA
100
T
JA
10
A
(t) = r(t) + R
= 250°C/W
15
A
= 25°C
t
= 250 °C/W
1
= P * R
t
FDW2521C Rev D1(W)
2
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
100
2
20
1000