FDC638P Fairchild Semiconductor, FDC638P Datasheet
FDC638P
Specifications of FDC638P
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FDC638P Summary of contents
Page 1
... SO-8; low profile (1mm thick =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ September 2001 = –4.5 V DS(ON –2.5 V DS(ON Ratings Units – –4.5 A –20 1.6 W 0.8 –55 to +150 C C/W 78 C/W 30 Tape width Quantity 8mm 3000 units FDC638P Rev F1 (W) ...
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... Min Typ Max Units –20 V –14 mV/ C –1 100 nA –100 nA –0.4 –0.8 –1 mV =125 – 1160 pF 195 pF 105 2.2 nC 1.5 nC –1.3 A –0.73 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper FDC638P Rev F (W) A ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC638P Rev F ( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 156 C/W JA P(pk ( Duty Cycle 100 FDC638P Rev F (W) 20 100 2 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...