FDC638P Fairchild Semiconductor, FDC638P Datasheet - Page 3

• Manufacturer Part Number: FDC638P
• Description: MOSFET P-CH 20V 4.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC638P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1160pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.048 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Transistor Type: MOSFET
• Max Voltage Vds: 20V
• On State Resistance: 0.045ohm
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: Super-SOT
• No. Of Pins: 6
• Svhc: Cobalt
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC638PTR

Typical Characteristics
20
15
10
5
0
15
12
9
6
3
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
0.5
Figure 1. On-Region Characteristics.
1
Figure 5. Transfer Characteristics.
-50
V
V
GS
-3.0V
DS
V
= -4.5V
I
GS
D
= -5V
-25
= -4.5A
= -4.5V
-V
-V
1
DS
1
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
0
, GATE TO SOURCE VOLTAGE (V)
J
-2.5V
, JUNCTION TEMPERATURE (
25
1.5
2
50
-2.0V
T
75
A
= -55
100
o
o
3
C
2
C)
125
125
o
C
25
o
C
150
2.5
4
Figure 6. Body Diode Forward Voltage Variation
0.15
0.12
0.09
0.06
0.03
0.0001
0.001
0.01
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1.6
1.4
1.2
0.8
0
100
0.1
10
1
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= -2.5V
Gate-to-Source Voltage.
0.2
-V
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
T
5
A
T
, GATE TO SOURCE VOLTAGE (V)
= 125
-3.0V
A
= 25
-I
0.4
D
, DRAIN CURRENT (A)
o
o
C
C
25
-3.5V
o
C
0.6
10
3
T
A
= 125
-55
o
-4.0V
C
o
0.8
C
15
4
FDC638P Rev F (W)
-4.5V
I
D
1
= -2.2A
1.2
20
5