FDC638P Fairchild Semiconductor, FDC638P Datasheet - Page 4

• Manufacturer Part Number: FDC638P
• Description: MOSFET P-CH 20V 4.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC638P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 48 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1160pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.048 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Transistor Type: MOSFET
• Max Voltage Vds: 20V
• On State Resistance: 0.045ohm
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: Super-SOT
• No. Of Pins: 6
• Svhc: Cobalt
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC638PTR

Typical Characteristics
5
4
3
2
1
0
0.01
0
100
Figure 9. Maximum Safe Operating Area.
0.1
10
Figure 7. Gate Charge Characteristics.
1
0.1
0.001
0.01
I
D
0.1
= -4.5A
R
SINGLE PULSE
R
0.0001
1
DS(ON)
V
JA
T
GS
A
= 156
= 25
= -4.5V
LIMIT
D = 0.5
0.2
3
o
o
0.1
C/W
C
0.05
-V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
Q
g
1
, GATE CHARGE (nC)
DC
0.001
10s
6
1s
Figure 11. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
10ms
V
10
DS
= -5V
0.01
9
1ms
-15V
-10V
100
12
0.1
t
1
, TIME (sec)
1500
1200
50
40
30
20
10
900
600
300
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
OSS
0.1
ISS
RSS
10
t
1
, TIME (sec)
10
1
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
100
SINGLE PULSE
R
JA
(t) = r(t) + R
15
JA
A
T
= 156
t
1
A
= P * R
= 156°C/W
10
t
2
= 25°C
FDC638P Rev F (W)
f = 1 MHz
V
GS
o
C/W
= 0 V
JA
1
(t)
JA
/ t
100
2
20
1000