NDS356AP Fairchild Semiconductor, NDS356AP Datasheet - Page 2

• Manufacturer Part Number: NDS356AP
• Description: MOSFET P-CH 30V 1.1A SSOT3
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS356AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.1A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356APTR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 0 V, I
= -24 V, V
= 20 V, V
= -20V, V
= V
= -4.5 V, I
= -10 V, I
= -4.5 V, V
= -5 V, I
= -10 V, V
= -10 V, I
= -10 V, R
= -10 V, I
= -5 V
GS
, I
D
D
D
= -250 µA
= -250 µA
D
DS
DS
D
D
D
= -1.1 A
GS
GS
GEN
= -1.3 A
= -1.1 A,
= -1.1 A
DS
= 0 V
= -1 A,
= 0 V
= 0 V
= 0 V,
= -5 V
= 50
T
T
T
J
J
J
=55°C
=125°C
=125°C
Min
-0.8
-0.5
-30
-3
0.25
0.35
0.14
Typ
-1.6
-1.3
280
170
3.4
0.7
1.5
65
17
53
38
2
8
Max
-100
100
-2.5
-2.2
-10
0.3
0.4
0.2
4.4
15
30
90
80
-1
NDS356AP Rev.C
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
1