NDS356AP Fairchild Semiconductor, NDS356AP Datasheet - Page 5
NDS356AP
Manufacturer Part Number
NDS356AP
Description
MOSFET P-CH 30V 1.1A SSOT3
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.NDS356AP.pdf
(7 pages)
Specifications of NDS356AP
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
4.4nC @ 5V
Input Capacitance (ciss) @ Vds
280pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
1.1A
Power Dissipation
500mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS356APTR
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Part Number
Manufacturer
Quantity
Price
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V
Typical Electrical Characteristics
GS
600
400
300
200
100
Figure 11. Switching Test Circuit
50
30
Figure 9. Capacitance Characteristics.
Figure 7. Breakdown Voltage Variation with
0.1
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1
-50
R
f = 1 MHz
V
GS
0.2
GEN
I
= 0 V
D
-25
= -250µA
-V
DS
V
T
, DRAIN TO SOURCE VOLTAGE (V)
0
0.5
Temperature.
J
IN
, JUNCTION TEMPERATURE (°C)
G
2 5
1
D
5 0
S
V
DD
2
R
7 5
L
.
DUT
C oss
1 0 0
C rss
C iss
5
(continued)
1 2 5
V
10
OUT
1 5 0
20
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation with
0.0001
1 0 %
0.001
10
0.01
Figure 10. Gate Charge Characteristics
8
6
4
2
0
0.5
0.1
0
5
2
1
0
Figure 12. Switching Waveforms
I
D
V
GS
t
= -1.1A
5 0 %
o n
1
= 0V
1 0 %
0.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
Source Current and Temperature
2
0.4
Q
g
T = 125°C
, GATE CHARGE (nC)
J
3
0.6
t
d(off)
25°C
-55°C
4
5 0 %
0.8
V
9 0 %
DS
5
t
1 0 %
off
= -5V
.
9 0 %
1
-15V
.
NDS356AP Rev.C
INVERTED
6
t
f
1.2
-10V
.
7
1