NDS356AP Fairchild Semiconductor, NDS356AP Datasheet - Page 3

• Manufacturer Part Number: NDS356AP
• Description: MOSFET P-CH 30V 1.1A SSOT3
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS356AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.1A
• Power Dissipation: 500mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS356APTR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SM
1. R
Notes:
SD
Typical R
design while R
P
JA
D
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
JA
a. 250
b. 270
Scale 1 : 1 on letter size paper
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
R
T
1 a
J
JA
Parameter
Maximum Continuous Source Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
CA
T
o
o
A
t
C/W when mounted on a 0.02 in
C/W when mounted on a 0.001 in
is determined by the user's board design.
R
JC
T
J
R
T
A
CA
t
1b
I
2
D
t
(T
2
R
2
pad of 2oz copper.
A
DS ON @T
pad of 2oz copper.
= 25°C unless otherwise noted)
J
Conditions
V
GS
= 0 V, I
S
= -0.42
(Note 2)
Min
Typ
-0.8
JC
-0.42
Max
-1.2
-10
is guaranteed by
NDS356AP Rev.C
Units
A
A
V
1