FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 2
![MOSFET P-CH 20V 3.3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDFS2P102A
Manufacturer Part Number
FDFS2P102A
Description
MOSFET P-CH 20V 3.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFS2P102A.pdf
(6 pages)
Specifications of FDFS2P102A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
125 mOhm @ 3.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 5V
Input Capacitance (ciss) @ Vds
182pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P102ATR
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDFS2P102A
Manufacturer:
FSC
Quantity:
43 202
Part Number:
FDFS2P102A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Schottky Diode Characteristics
I
V
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
R
FS
GS(th)
SD
F
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Reverse Leakage
Forward Voltage
Parameter
(Note 2)
(Note 2)
V
I
V
V
V
T
D
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
I
A
GS
DS
GS
GS
D
F
F
= –250 µA,Referenced to 25°C
= 25°C unless otherwise noted
V
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
R
= –250 µA,Referenced to 25°C
= 1 A
= 2 A
= –16 V,
GS
= 0 V, I
= 20 V,
= –20 V,
= 20 V
=–10 V, I
= V
= –5V, I
= –10 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V, V
= –10 V,
= –10 V,
= –5 V
= 0 V,
Test Conditions
GS
, I
D
D
= –250 µA
D
D
= –250 µA
= –3.3 A
V
V
I
=–3.3A, T
V
DS
S
GS
DS
DS
= –1.3 A
I
I
V
I
D
D
= –5 V
I
R
D
D
= 0 V
= 0 V
GS
= 0 V
= –3.3 A
= –2.5 A
GEN
= –3.3 A,
T
T
T
T
T
T
= –1 A,
J
J
J
J
J
J
= 0 V,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 6 Ω
J
=125°C
(Note 2)
Min
–20
–10
–1
Typ Max Units
–1.8
–0.8
–23
152
137
182
4.4
4.6
2.1
1.0
0.6
96
60
24
14
11
5
2
–100
–1.3
–1.2
0.47
0.39
0.58
0.53
100
125
200
190
FDFS2P102A Rev A1(W)
3.0
–1
–3
10
52
20
50
18
4
mV/°C
mV/°C
mΩ
mA
µA
nA
nA
pF
pF
pF
nC
nC
nC
µA
ns
ns
ns
ns
V
V
A
S
A
V
V