FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 2

• Manufacturer Part Number: FDFS2P102A
• Description: MOSFET P-CH 20V 3.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P102A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 5V
• Input Capacitance (ciss) @ Vds: 182pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P102ATR; FDFS2P102A_NL; FDFS2P102A_NLTR; FDFS2P102A_NLTR

Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
Schottky Diode Characteristics
I
V
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
R
FS
GS(th)
SD
F
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Reverse Leakage
Forward Voltage
Parameter
(Note 2)
(Note 2)
V
I
V
V
V
T
D
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
I
A
GS
DS
GS
GS
D
F
F
= –250 µA,Referenced to 25°C
= 25°C unless otherwise noted
V
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
R
= –250 µA,Referenced to 25°C
= 1 A
= 2 A
= –16 V,
GS
= 0 V, I
= 20 V,
= –20 V,
= 20 V
=–10 V, I
= V
= –5V, I
= –10 V,
= –10 V,
= –10 V,
= –4.5 V,
= –10 V, V
= –10 V,
= –10 V,
= –5 V
= 0 V,
Test Conditions
GS
, I
D
D
= –250 µA
D
D
= –250 µA
= –3.3 A
V
V
I
=–3.3A, T
V
DS
S
GS
DS
DS
= –1.3 A
I
I
V
I
D
D
= –5 V
I
R
D
D
= 0 V
= 0 V
GS
= 0 V
= –3.3 A
= –2.5 A
GEN
= –3.3 A,
T
T
T
T
T
T
= –1 A,
J
J
J
J
J
J
= 0 V,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 6 Ω
J
=125°C
(Note 2)
Min
–20
–10
–1
Typ Max Units
–1.8
–0.8
–23
152
137
182
4.4
4.6
2.1
1.0
0.6
96
60
24
14
11
5
2
–100
–1.3
–1.2
0.47
0.39
0.58
0.53
100
125
200
190
FDFS2P102A Rev A1(W)
3.0
–1
–3
10
52
20
50
18
4
mV/°C
mV/°C
mΩ
mA
µA
nA
nA
pF
pF
pF
nC
nC
nC
µA
ns
ns
ns
ns
V
V
A
S
A
V
V