FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 3

• Manufacturer Part Number: FDFS2P102A
• Description: MOSFET P-CH 20V 3.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P102A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 5V
• Input Capacitance (ciss) @ Vds: 182pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P102ATR; FDFS2P102A_NL; FDFS2P102A_NLTR; FDFS2P102A_NLTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Thermal Characteristics
R
R
θJA
θJA
θJC
the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
θJC
is guaranteed by design while R
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
θCA
is determined by the user's board design.
b)
(Note 1a)
(Note 1)
125°C/W when
mounted on a
0.02 in
2 oz copper
2
pad of
78
40
c)
135°C/W when
mounted on a
minimum pad.
FDFS2P102A Rev A1(W)
°C/W
°C/W