FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 4

• Manufacturer Part Number: FDFS2P102A
• Description: MOSFET P-CH 20V 3.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P102A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 5V
• Input Capacitance (ciss) @ Vds: 182pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P102ATR; FDFS2P102A_NL; FDFS2P102A_NLTR; FDFS2P102A_NLTR

Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
0
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
GS
-7.0V
V
DS
= -10V
V
I
= -5V
D
GS
= -3.3A
-25
= -10V
1
-V
-6.0V
-5.0V
2
-V
GS
T
DS
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
-4.5V
25
2
3
50
3
75
-4.0V
T
A
= -55
100
o
4
o
C)
C
-3.5V
4
125
125
o
25
C
o
C
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.52
0.46
0.34
0.28
0.22
0.16
0.04
0.0001
0.4
0.1
0.001
2.2
1.8
1.6
1.4
1.2
0.8
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
2
1
10
2
1
0
0
Drain Current and Gate Voltage.
V
T
V
A
GS
GS
= 25
= -4.0V
= 0V
Gate-to-Source Voltage.
0.2
o
C
2
-V
-V
SD
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
-4.5V
- I
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
D
T
, DRAIN CURRENT (A)
A
= 125
-5.0V
4
o
C
o
0.6
C
-6.0V
6
25
o
6
C
0.8
-7.0V
-55
o
C
8
1
FDFS2P102A Rev A1(W)
8
-10V
I
A
D
= -1.7A
1.2
10
1.4
10