FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 5
![MOSFET P-CH 20V 3.3A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDFS2P102A
Manufacturer Part Number
FDFS2P102A
Description
MOSFET P-CH 20V 3.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFS2P102A.pdf
(6 pages)
Specifications of FDFS2P102A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
125 mOhm @ 3.3A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 5V
Input Capacitance (ciss) @ Vds
182pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P102ATR
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR
FDFS2P102A_NL
FDFS2P102A_NLTR
FDFS2P102A_NLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDFS2P102A
Manufacturer:
FSC
Quantity:
43 202
Part Number:
FDFS2P102A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
Figure 9. Schottky Diode Forward Voltage.
0.001
10
8
6
4
2
0
0.01
0.1
Figure 7. Gate Charge Characteristics.
10
0
1
0.01
0
0.1
I
D
1
0.001
= -3.3A
0.1
D = 0.5
T
J
0.2
= 125
0.1
1
0.2
0.05
V
0.02
o
F
C
, FORWARD VOLTAGE (V)
Q
0.01
g
, GATE CHARGE (nC)
0.3
SINGLE PULSE
0.01
2
0.4
Figure 11. Transient Thermal Response Curve.
T
J
= 25
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
0.5
DS
o
C
= -5V
0.6
3
0.1
-15V
0.7
-10V
0.8
4
t
1
, TIME (sec)
1
Figure 10. Schottky Diode Reverse Current.
300
250
200
150
100
50
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
0
Figure 8. Capacitance Characteristics.
0
0
-V
10
5
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
V
R
C
C
C
, REVERSE VOLTAGE (V)
T
ISS
OSS
RSS
J
T
= 125
J
= 25
o
10
C
o
C
10
P(pk)
Duty Cycle, D = t
100
T
R
R
J
θJA
- T
θJA
(t) = r(t) + R
A
t
= 135 °C/W
1
= P * R
t
2
15
FDFS2P102A Rev A1(W)
15
V
θJA
f = 1MHz
GS
1
θJA
(t)
/ t
= 0 V
2
1000
20
20