FDFS2P102A Fairchild Semiconductor, FDFS2P102A Datasheet - Page 5

• Manufacturer Part Number: FDFS2P102A
• Description: MOSFET P-CH 20V 3.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P102A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 5V
• Input Capacitance (ciss) @ Vds: 182pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P102ATR; FDFS2P102A_NL; FDFS2P102A_NLTR; FDFS2P102A_NLTR

Typical Characteristics
Figure 9. Schottky Diode Forward Voltage.
0.001
10
8
6
4
2
0
0.01
0.1
Figure 7. Gate Charge Characteristics.
10
0
1
0.01
0
0.1
I
D
1
0.001
= -3.3A
0.1
D = 0.5
T
J
0.2
= 125
0.1
1
0.2
0.05
V
0.02
o
F
C
, FORWARD VOLTAGE (V)
Q
0.01
g
, GATE CHARGE (nC)
0.3
SINGLE PULSE
0.01
2
0.4
Figure 11. Transient Thermal Response Curve.
T
J
= 25
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
0.5
DS
o
C
= -5V
0.6
3
0.1
-15V
0.7
-10V
0.8
4
t
1
, TIME (sec)
1
Figure 10. Schottky Diode Reverse Current.
300
250
200
150
100
50
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
1.0E-07
0
Figure 8. Capacitance Characteristics.
0
0
-V
10
5
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
V
R
C
C
C
, REVERSE VOLTAGE (V)
T
ISS
OSS
RSS
J
T
= 125
J
= 25
o
10
C
o
C
10
P(pk)
Duty Cycle, D = t
100
T
R
R
J
θJA
- T
θJA
(t) = r(t) + R
A
t
= 135 °C/W
1
= P * R
t
2
15
FDFS2P102A Rev A1(W)
15
V
θJA
f = 1MHz
GS
1
θJA
(t)
/ t
= 0 V
2
1000
20
20