AO4419 Alpha & Omega Semiconductor Inc, AO4419 Datasheet - Page 3

• Manufacturer Part Number: AO4419
• Description: MOSFET P-CH -30V -9.7A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4419

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 15V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1024-2

AO4419
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
25
20
15
10
60
50
40
30
20
10
30
25
20
15
10
0
5
0
0
3
0
Figure 5: On-Resistance vs. Gate-Source Voltage
-10V
Figure 3: On-Resistance vs. Drain Current and
4
5
V
Fig 1: On-Region Characteristics
-5V
1
GS
=-4.5V
5
10
Gate Voltage
2
-V
-V
6
-I
DS
GS
25°C
D
(Volts)
(A)
(Volts)
-4V
7
V
15
V
3
GS
GS
I
D
=-10V
=-9.7A
=-3V
-3.5V
8
125°C
20
4
9
25
10
5
1.60
1.40
1.20
1.00
0.80
1.0E+01
1.0E+00
30
25
20
15
10
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
5
0
1
0
0.0
1.5
Figure 4: On-Resistance vs. Junction
25
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
2
50
0.2
125°C
V
125°C
Temperature (°C)
I
V
DS
2.5
D
GS
=-9.7A
Temperature
=-5V
-V
=-10V
75
GS
0.4
-V
(Volts)
3
SD
100
(Volts)
25°C
V
I
3.5
D
25°C
GS
=-7A
0.6
=-4.5V
125
4
0.8
150
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4.5
175
5
1.0