AO4419 Alpha & Omega Semiconductor Inc, AO4419 Datasheet - Page 4

MOSFET P-CH -30V -9.7A 8-SOIC

AO4419

Manufacturer Part Number
AO4419
Description
MOSFET P-CH -30V -9.7A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4419

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 15V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1024-2

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AO4419
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
10
40
30
20
10
8
6
4
2
0
1
0.001
0
0.001
0
V
I
D
DS
=-9.7A
Figure 9: Single Pulse Avalanche Capability
=-15V
4
Figure 7: Gate-Charge Characteristics
0.01
Time in Avalache, t
8
0.01
In descending order
T
0.1
A
12
=25°C, 100°C, 125°C, 150°C
-Q
g
(nC)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
16
1
A
(ms)
20
0.1
10
24
100
28
Pulse Width (s)
1
100.0
2250
2000
1750
1500
1250
1000
10.0
750
500
250
1.0
0.1
0
0.1
0
R
limited
T
T
J(Max)
A
Figure 10: Maximum Forward Biased Safe
DS(ON)
=25°C
Figure 8: Capacitance Characteristics
C
=150°C,
oss
5
10
Operating Area (Note E)
10
1
10s
-V
C
-V
C
iss
DS
DS
rss
15
(Volts)
(Volts)
DC
100
20
10
T
T
J(Max)
A
=25°C
www.aosmd.com
25
=150°C
10µs
100µs
1ms
10ms
0.1s
1s
1000
100
30

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