FDMA520PZ Fairchild Semiconductor, FDMA520PZ Datasheet
FDMA520PZ
Specifications of FDMA520PZ
Available stocks
Related parts for FDMA520PZ
FDMA520PZ Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device 520 FDMA520PZ ©2009 Fairchild Semiconductor Corporation FDMA520PZ Rev.B2 ® MOSFET General Description = –7.3A This device is designed specifically for battery charge or load D switching in cellular handset and other ultraportable applications. = –5. features a MOSFET with low on-state resistance ...
Page 2
... JA a. 52°C/W when mounted Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA520PZ Rev. 25°C unless otherwise noted J Test Conditions I = – ...
Page 3
... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 24 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMA520PZ Rev. 25°C unless otherwise noted J PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX V = -2. 100 125 150 ( 0.001 0.0001 ...
Page 4
... GS 1E 125 C J 1E-6 1E 1E-8 1E GATE TO SOURCE VOLTAGE(V) GS Figure 9. Gate Leakage Current vs Gate to Source Voltage 150 120 PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDMA520PZ Rev. 25°C unless otherwise noted J 3000 V = -5V DD 1000 V = -10V -15V SINGLE PULSE 145 C = 0.005 ...
Page 5
... Dimensional Outline and Pad Layout FDMA520PZ Rev.B2 5 www.fairchildsemi.com ...
Page 6
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMA520PZ Rev. B2 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...