FDMA520PZ Fairchild Semiconductor, FDMA520PZ Datasheet - Page 3

• Manufacturer Part Number: FDMA520PZ
• Description: MOSFET P-CH 20V 7.3A MLP2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA520PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1645pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 7.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.1V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA520PZTR

FDMA520PZ Rev.B2
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
24
18
12
24
18
12
Figure 3. Normalized On- Resistance
-50
Figure 1.
6
0
6
0
Figure 5. Transfer Characteristics
0
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
V
DD
I
-25
D
GS
vs Junction Temperature
-V
-V DS , DRAIN TO SOURCE VOLTAGE (V)
= -7.3A
= -5V
T
= -4.5V
GS
J
, JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
On-Region Characteristics
0
1
1
T
J
V
V
V
V
GS
= 125
GS
GS
GS
25
= -3.5V
= -4V
= -4.5V
= -3V
o
C
50
2
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
T
GS
J
75
T
= 25°C unless otherwise noted
= -2.5V
T
J
J
=-55
= 25
100
o
C
(
o
3
3
C
o
C
)
125
150
4
4
3
0.0001
0.001
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
60
50
40
30
20
10
30
10
Figure 2.
Figure 4.
1
Forward Voltage vs Source Current
0.0
0
vs Drain Current and Gate Voltage
Figure 6.
2
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
I
V
D
-V
GS
= -3.6A
0.2
SD
-V
T
= 0V
J
GS
, BODY DIODE FORWARD VOLTAGE (V)
3
= 125
Normalized On-Resistance
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
V
Source Voltage
0.4
GS
6
Source to Drain Diode
-I D , DRAIN CURRENT(A)
o
C
= -2.5V
4
0.6
T
V
V
J
GS
GS
= 25
12
T
0.8
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
5
= -4V
J
= -3V
= -55
o
T
T
C
J
J
= 25
= 125
1.0
o
C
V
6
o
GS
C
o
C
18
1.2
= -4.5V
V
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GS
= -3.5V
7
1.4
24
1.6
8