FDMA520PZ Fairchild Semiconductor, FDMA520PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA520PZ
• Description: MOSFET P-CH 20V 7.3A MLP2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA520PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1645pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 7.3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.1V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.3 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA520PZTR

FDMA520PZ Rev.B2
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
V
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 52°C/W when mounted on
a 1 in
2
pad of 2 oz copper
T
J
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
I
V
f = 1MHz
I
I
V
V
D
V
V
F
D
D
GS
GS
GS
GS
DS
GS
DD
GS
DS
DS
GS
DD
GS
=–7.3A, di/dt = 100A/ s
= –250 A, referenced to 25°C
= –250 A, V
= –250 A, referenced to 25°C
= –5V, I
= 0V, I
= V
= –4.5V, I
= –2.5V, I
= –4.5V, I
= –10V, V
= –10V, I
= –4.5V, R
= –16V, V
= ±12V, V
= –4.5V
= –5V, I
DS
2
Test Conditions
, I
S
D
D
= –2A
D
D
D
D
D
= –7.3A
= –250 A
GS
GS
DS
= –7.3A
GS
GEN
= –7.3A
= –7.3A
= –5.5A
= –7.3A ,T
= 0V
= 0V,
= 0V
= 0V
= 6
J
= 125°C
b.145°C/W when mounted on a
minimum pad of 2 oz copper
–0.6
Min
–20
–8.4
1235
–0.8
Typ
–1.1
255
225
2.9
4.4
22
3.5
10
29
83
74
14
30
26
42
36
22
Max
1645
–1.2
±10
–1.5
133
119
340
340
–1
20
47
20
–2
45
33
30
53
55
www.fairchildsemi.com
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
A
A