FDFMA2P029Z Fairchild Semiconductor, FDFMA2P029Z Datasheet - Page 2

• Manufacturer Part Number: FDFMA2P029Z
• Description: MOSFET P-CH 20V 3.1A 2X2MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P029Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P029ZTR

FDFMA2P029Z Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
BV
'BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
V
I
V
DSS
GSS
'V
d(on)
r
d(off)
f
S
rr
R
DS(on)
FS
GS(th)
SD
R
F
iss
oss
rss
'T
'T
g(TOT)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Voltage
Reverse Leakage
Forward Voltage
Parameter
T
J
= 25°C unless otherwise noted
I
V
I
I
I
I
V
V
V
I
V
V
V
V
V
I
V
V
V
V
V
f = 1MHz
R
F
F
D
D
D
F
R
DS
GS
GS
GS
GS
GS
DS
DD
GS
DD
GS
GS
DS
= 500mA
= 1A
= –3.1A, di/dt = 100A/Ps
= 1mA
= –250PA, V
= –250PA, referenced to 25°C
= –250PA, referenced to 25°C
= 20V
= –16V, V
= –10V, I
= 0V, I
= ±12V, V
= V
= –4.5V, I
= –2.5V, I
= –4.5V, I
= –10V, I
= –4.5V, R
= –10V, I
= –4.5V
= –10V, V
DS
Test Conditions
2
, I
S
= –1.1A
D
D
D
D
DS
D
D
GS
GS
= –250PA
GS
D
GEN
= –1A
= –3.1A
= –3.1A
= –3.1A,T
= –3.1A
= –2.5A
= 0V
= 0V,
= 0V
= 0V
= 6:
T
T
T
T
T
T
T
(Note 2)
J
J
J
J
J
J
J
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
J
=125°C
–0.6
Min
–20
20
–0.8
–1.0
540
120
100
–11
1.1
2.4
0.32
0.21
0.37
0.28
Typ
25
–12
13
37
36
60
88
87
11
9
7
30
10
4
0.435
–1.1
–1.2
–1.5
Max
720
160
150
141
140
0.37
0.26
0.33
±10
300
24
20
59
58
10
95
–1
45
www.fairchildsemi.com
mV/°C
mV/°C
Units
m:
nC
mA
pF
pF
pF
nC
nC
nC
PA
PA
ns
ns
ns
PA
ns
ns
V
S
A
V
V
V
V