FDFMA2P029Z Fairchild Semiconductor, FDFMA2P029Z Datasheet - Page 6

• Manufacturer Part Number: FDFMA2P029Z
• Description: MOSFET P-CH 20V 3.1A 2X2MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P029Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P029ZTR

FDFMA2P029Z Rev.B1
Typical Characteristics
0.005
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
SINGLE PULSE
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-3
T
Figure 13. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
6
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
1
J
= P
DM
x Z
P
TJA
DM
1
/t
x R
2
10
TJA
2
t
1
+ T
t
2
A
www.fairchildsemi.com
10
3