FDFMA2P029Z Fairchild Semiconductor, FDFMA2P029Z Datasheet - Page 5

• Manufacturer Part Number: FDFMA2P029Z
• Description: MOSFET P-CH 20V 3.1A 2X2MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P029Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P029ZTR

FDFMA2P029Z Rev.B1
Typical Characteristics
0.001
Figure 11.
0.01
0.01
0.1
0.1
10
10
20
10
Figure 7.
8
6
4
2
0
1
1
0.1
0
0
r
I
V
SINGLE PULSE
R
T
DS(on)
DD
A =
GS
T
Figure 9. Forward Bias Safe
JA
= -3.1A
T
=-4.5V
25
=
-V DS , DRAIN to SOURCE VOLTAGE (V)
J
2
173
LIMIT
= 125
Schottky Diode Forward Voltage
o
V
C
Gate Charge Characteristics
o
F,
C/W
200
Operating Area
FORWARD VOLTAGE(mV)
o
Q
C
4
g
, GATE CHARGE(nC)
T
J
1
= 25
6
o
V
C
T
400
DD
J
= 85
= -5V
T
8
J
o
C
= 25°C unless otherwise noted
V
10
10
DD
600
V
= -10V
DD
12
= -15V
100ms
10s
100us
10ms
1s
DC
1ms
60
800
14
5
0.001
Figure 12.
1000
0.01
100
100
0.1
50
40
30
20
10
10
50
Figure 8.
10
0
1
0.1
Figure 10.
0
-4
f = 1MHz
V
GS
10
-V
-3
= 0V
5
Schottky Diode Reverse Current
DS
Power Dissipation
Capacitance Characteristics
, DRAIN TO SOURCE VOLTAGE (V)
V
10
Single Pulse Maximum
t, PULSE WIDTH (s)
R
, REVERSE VOLTAGE (V)
-2
10
SINGLE PULSE
10
1
-1
15
10
0
20
10
T
T
T
SINGLE PULSE
R
T
J
J
J
1
A
T
= 85
= 125
= 25
JA
=25
C
C
C
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= 173
oss
iss
rss
o
o
o
25
10
C
C
o
C
10
C
2
o
C/W
10
20
30
3