SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet - Page 2
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SPB12N50C3
Manufacturer Part Number
SPB12N50C3
Description
MOSFET N-CH 560V 11.6A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPB12N50C3.pdf
(12 pages)
Specifications of SPB12N50C3
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014894
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB12N50C3
Manufacturer:
INFINEON
Quantity:
30 000
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature, reflow soldering, MSL1
1.6 mm (0.063 in.) from case for 10s
Rev. 2.4
Maximum Ratings
Parameter
Electrical Characteristics, at T j =25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
DS
= 400 V, I
2
cooling area
D
= 11.6 A, T
3)
j
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
4)
Page 2
V
I
V
T
T
V
V
T
T
f=1MHz, open drain
D
j
j
j
j
GS
GS
DS
GS
GS
=25°C
=150°C
=25°C
=150°C
=500µA, V GS =V DS
Conditions
=500V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
d v /d t
Symbol
R
R
R
R
R
T
D
D
D
sold
=0.25mA
=11.6A
thJC
thJC_FP
thJA
thJA_FP
thJA
DS
=7A
GS
=0V
=0V,
min.
min.
500
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.34
0.92
typ.
typ.
600
0.1
1.4
50
35
3
-
-
-
-
-
-
-
-
-
SPB12N50C3
2005-11-07
max.
max.
0.38
260
100
100
3.8
3.9
62
80
62
1
1
-
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA
Ω