SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet - Page 4

• Manufacturer Part Number: SPB12N50C3
• Description: MOSFET N-CH 560V 11.6A TO-263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB12N50C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014894; SPB12N50C3; SPB12N50C3INTR; SPB12N50C3XT

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Rev. 2.4
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015
0.056
0.197
0.216
0.083
SPB
0.03
P
tot
(t)
Value
T
j
C
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Page 4
T
V
V
di
T
C
j
GS
R
F
=25°C
C
=25°C
=400V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
0.000988
0.002791
0.007285
SPB
0.063
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
1100
typ.
380
5.5
38
1
-
-
SPB12N50C3
2005-11-07
max.
11.6 A
34.8
1.2
-
-
-
-
Unit
Ws/K
Unit
V
ns
µC
A
A/µs