SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet - Page 9
![MOSFET N-CH 560V 11.6A TO-263](/photos/5/52/55279/spb12n50c3_sml.jpg)
SPB12N50C3
Manufacturer Part Number
SPB12N50C3
Description
MOSFET N-CH 560V 11.6A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPB12N50C3.pdf
(12 pages)
Specifications of SPB12N50C3
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014894
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB12N50C3
Manufacturer:
INFINEON
Quantity:
30 000
17 Avalanche power losses
P
parameter: E
19 Typ. C
E
Rev. 2.4
AR
oss
µJ
W
300
200
150
100
= f ( V
= f ( f )
50
0
6
4
3
2
1
0
10
0
4
DS
oss
)
100
AR
stored energy
=0.6mJ
200
10
5
300
Hz
V
f
V
DS
500
10
Page 9
6
18 Typ. capacitances
C = f ( V
parameter: V
pF
10
10
10
10
10
10
-1
4
3
2
1
0
0
DS
)
100
GS
=0V, f=1 MHz
Crss
200
Ciss
Coss
300
SPB12N50C3
2005-11-07
V
V
DS
500