SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet - Page 6
![MOSFET N-CH 560V 11.6A TO-263](/photos/5/52/55279/spb12n50c3_sml.jpg)
SPB12N50C3
Manufacturer Part Number
SPB12N50C3
Description
MOSFET N-CH 560V 11.6A TO-263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPB12N50C3.pdf
(12 pages)
Specifications of SPB12N50C3
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014894
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPB12N50C3
Manufacturer:
INFINEON
Quantity:
30 000
5 Transient thermal impedance
Z
parameter: D = t
7 Typ. output characteristic
I
parameter: t
Rev. 2.4
D
thJC
K/W
= f ( V
10
10
10
10
10
10
A
40
32
28
24
20
16
12
= f (t
-1
-2
-3
-4
8
4
0
1
0
10
0
DS
-7
p
); T
)
10
p
= 10 µs, V
5
-6
j
=25°C
p
/T
10
20V
10V
8V
-5
10
10
GS
-4
15
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
-3
V
4.5V
6.5V
6V
5.5V
5V
s
V
t
7V
p
DS
10
25
Page 6
-1
6 Transient thermal impedance FullPAK
Z
parameter: D = t
8 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f ( V
10
10
10
10
10
10
A
22
18
16
14
12
10
= f ( t
-1
-2
-3
-4
8
6
4
2
0
1
0
10
0
DS
-7
p
); T
10
)
p
-6
= 10 µs, V
5
j
10
=150°C
p
-5
/t
10
10
-4
20V
8V
7.5V
7V
10
GS
-3
15
SPB12N50C3
10
-2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
2005-11-07
10
V
-1
6V
5.5V
5V
4.5V
t
V
p
4V
s
DS
10
25
1