SPP11N65C3 Infineon Technologies, SPP11N65C3 Datasheet
SPP11N65C3
Specifications of SPP11N65C3
SPP11N65C3
SPP11N65C3IN
SPP11N65C3X
SPP11N65C3XK
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SPP11N65C3 Summary of contents
Page 1
... Power dissipation 25°C C Operating and storage temperature Rev. 2.9 PG-TO262 Ordering Code Q67040-S4557 SP000216318 Q67040-S4561 Symbol jmax D puls limited jmax limited jmax Page 1 SPP11N65C3,SPA11N65C3 SPI11N65C3 650 0.38 DS(on PG-TO220FP PG-TO220 Marking 11N65C3 11N65C3 11N65C3 Value SPP_I SPA 340 340 AS 0.6 0 ±20 ± ...
Page 2
... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate input resistance Rev. 2.9 SPP11N65C3,SPA11N65C3 Symbol dv/dt Symbol R thJC R thJC_FP R thJA R thJA_FP ...
Page 3
... V =380V, V d(on =11A =6.8Ω t d(off =480V, I =11A =480V, I =11A 10V =480V, I =11A DD D (plateau) Page 3 SPP11N65C3,SPA11N65C3 SPI11N65C3 Values min. typ. max 1200 - 390 - =0/10V 5 5 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...
Page 4
... Unit Symbol SPA 0.15 K/W C th1 0.03 C th2 0.056 C th3 0.194 C th4 0.413 C th5 2.522 C th6 th1 th th1 th2 th,n Page 4 SPP11N65C3,SPA11N65C3 SPI11N65C3 Values min. typ 400 = 1200 Value SPP_I SPA 0.0001878 0.0001878 0.0007106 0.0007106 0.000988 0.000988 0.002791 0.002791 0.007285 ...
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... Power dissipation tot C SPP11N65C3 140 W 120 110 100 Safe operating area parameter : =25° 0.0008 0. 0 Rev. 2.9 2 Power dissipation FullPAK tot W °C 100 120 160 Safe operating area FullPAK parameter Page 5 SPP11N65C3,SPA11N65C3 SPI11N65C3 ) 100 ) DS = 25° 0.0008 0. 0 °C 120 160 2007-08-30 ...
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... Rev. 2.9 6 Typ. output characteristic parameter 0.01 single pulse - Typ. drain-source on resistance R DS(on) parameter: T Ω 6V 1.6 1.4 5.5V 1.2 5V 0.8 4.5V 4V 0.6 0 Page 6 SPP11N65C3,SPA11N65C3 SPI11N65C3 ); T =25° µ 20V 10V =f =150° 4. 5.5V 1 6.5V 8V 20V 6,5V 6V 5,5V 5V 4,5V V ...
Page 7
... Rev. 2.9 10 Typ. transfer characteristics parameter: t °C 100 180 Forward characteristics of body diode parameter 0 max Gate Page 7 SPP11N65C3,SPA11N65C3 SPI11N65C3 ≥ DS(on)max = 10 µ 25° µ SPP11N65C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1.6 2 150° 2 2007-08-30 ...
Page 8
... Typ. drain source voltage slope = 125°C dv/dt = f(R j =11A par 140 V/ns 120 110 100 di/dt(off) Ω 80 120 R G Page 8 SPP11N65C3,SPA11N65C3 SPI11N65C3 ), inductive load, T =125° =380V, V =0/+13V inductive load 125° =380V, V =0/+13V dv/dt(off) ...
Page 9
... Rev. 2.9 18 Typ. switching losses E = f(R =6.8Ω par mWs Avalanche energy E AS par j(Start) =25° µ Page 9 SPP11N65C3,SPA11N65C3 SPI11N65C3 ), inductive load, T =125° =380V, V =0/+13V 0.24 *) Eon includes SPD06S60 diode commutation losses 0.16 Eoff 0.12 0.08 Eon 350 ...
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... Avalanche power losses parameter: E 300 W 200 150 100 50 0 °C 100 180 Typ =f(V oss 7.5 µJ 6 5.5 5 4.5 4 3.5 3 2.5 2 1 400 600 V DS Page 10 SPP11N65C3,SPA11N65C3 SPI11N65C3 =0.6mJ stored energy oss ) DS 0 100 200 300 400 2007-08- 600 V DS ...
Page 11
... Definition of diodes switching characteristics Rev. 2.9 SPP11N65C3,SPA11N65C3 Page 11 SPI11N65C3 2007-08-30 ...
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... PG-TO220-3-1, PG-TO220-3-21 Rev. 2.9 SPP11N65C3, SPA11N65C3 Page 12 SPI11N65C3 2007-08-30 ...
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... PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 2.9 SPP11N65C3, SPA11N65C3 Page 13 SPI11N65C3 2007-08-30 ...
Page 14
... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 2.9 SPP11N65C3, SPA11N65C3 Page 14 SPI11N65C3 2007-08-30 ...
Page 15
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 SPP11N65C3,SPA11N65C3 Page 15 SPI11N65C3 2007-08-30 ...