SPP11N65C3 Infineon Technologies, SPP11N65C3 Datasheet - Page 9

• Manufacturer Part Number: SPP11N65C3
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP11N65C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014371; SPP11N65C3; SPP11N65C3IN; SPP11N65C3X; SPP11N65C3XK

17 Typ. switching losses
E = f (I
par.: V
19 Avalanche SOA
I
par.: T
AR
mWs
Rev. 2.9
0.025
0.015
0.005
= f (t
0.04
0.03
0.02
0.01
A
2.5
1.5
0.5
0
4
3
2
1
0
D
DS
j
10
0
≤ 150 °C
), inductive load, T
*) Eon includes SPD06S60 diode
AR
-3
=380V, V
commutation losses
)
10
T j(Start) =125°C
2
-2
Eon*
10
GS
4
-1
=0/+13V, R
10
Eoff
0
6
j
=125°C
10
T j(Start) =25°C
1
8
10
G
2
=6.8Ω
A
I
t
µs
D
AR
10
12
4
Page 9
18 Typ. switching losses
E = f(R
par.: V
20 Avalanche energy
E
par.: I
AS
mWs
mJ
0.24
0.16
0.12
0.08
0.04
350
250
200
150
100
= f (T
50
D
0
0
DS
20
0
G
= 2.5 A, V
*) Eon includes SPD06S60 diode
), inductive load, T
=380V, V
commutation losses
SPP11N65C3,SPA11N65C3
j
)
10
40
20
60
DD
GS
= 50 V
Eoff
=0/+13V,I
30
80
100
40
j
=125°C
SPI11N65C3
Eon*
120
D
50
2007-08-30
=11A
°C
Ω
R
T
j
G
160
70