SPP11N65C3 Infineon Technologies, SPP11N65C3 Datasheet - Page 10

• Manufacturer Part Number: SPP11N65C3
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP11N65C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014371; SPP11N65C3; SPP11N65C3IN; SPP11N65C3X; SPP11N65C3XK

21 Drain-source breakdown voltage
V
23 Typ. capacitances
C = f (V
parameter: V
(BR)DSS
Rev. 2.9
pF
10
10
10
10
10
785
745
725
705
685
665
645
625
605
585
V
-60
4
3
2
1
0
0
DS
= f (T
)
C
100
-20
rss
GS
j
)
=0V, f=1 MHz
200
20
C
C
300
60
iss
oss
400
100
°C
V
T
V
j
DS
600
180
Page 10
22 Avalanche power losses
P
parameter: E
24 Typ. C
E
AR
oss
µJ
300
W
200
150
100
=f(V
= f (f )
7.5
5.5
4.5
3.5
2.5
1.5
0.5
50
0
6
5
4
3
2
1
0
10
0
4
DS
SPP11N65C3,SPA11N65C3
oss
)
100
AR
stored energy
=0.6mJ
200
300
10
5
SPI11N65C3
400
2007-08-30
Hz
V
f
V
DS
600
10
6