SPP11N65C3 Infineon Technologies, SPP11N65C3 Datasheet - Page 7

MOSFET N-CH 650V 11A TO-220

SPP11N65C3

Manufacturer Part Number
SPP11N65C3
Description
MOSFET N-CH 650V 11A TO-220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPP11N65C3

Package / Case
TO-220-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
5 ns
Rise Time
5 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014371
SPP11N65C3
SPP11N65C3IN
SPP11N65C3X
SPP11N65C3XK

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9 Drain-source on-state resistance
R
parameter : I
11 Typ. gate charge
V
parameter: I
Rev. 2.9
GS
DS(on)
2.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP11N65C3
SPP11N65C3
= f (T
Gate
10
-20
D
D
j
)
= 11 A pulsed
= 7 A, V
)
20
20
98%
0,2
30
GS
typ
V
60
DS max
= 10 V
40
100
0,8 V
50
DS max
°C
nC
T
Q
j
Gate
180
70
Page 7
10 Typ. transfer characteristics
I
parameter: t
12 Forward characteristics of body diode
I
parameter: T j , t
D
F
= f ( V
= f (V
10
10
10
10
A
A
40
32
28
24
20
16
12
8
4
0
-1
2
1
0
0
0
GS
SD
SPP11N65C3
SPP11N65C3,SPA11N65C3
)
0.4
); V
2
p
= 10 µs
DS
p
0.8
4
≥ 2 x I
= 10 µs
25°C
1.2
6
T
T
T
T
j
j
j
j
D
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
x R
1.6
8
DS(on)max
SPI11N65C3
10
2
2007-08-30
150°C
2.4
12
V
V
V
V
SD
GS
15
3

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