SPP11N65C3 Infineon Technologies, SPP11N65C3 Datasheet - Page 3

• Manufacturer Part Number: SPP11N65C3
• Description: MOSFET N-CH 650V 11A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP11N65C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 5 ns
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014371; SPP11N65C3; SPP11N65C3IN; SPP11N65C3X; SPP11N65C3XK

Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 C
5 C
Rev. 2.9
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
4)
5)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
fs
gs
gd
g
(plateau)
iss
oss
rss
o(er)
o(tr)
V
I
V
f=1MHz
V
V
V
I
R
V
V
V
V
Page 3
D
D
DD
DD
GS
DD
DS
GS
GS
DS
DD
G
=7A
=11A,
=6.8Ω
≥2*I
=0V, V
=0V,
=0V to 480V
=0 to 10V
=380V, V
=480V, I
=480V, I
=480V, I
Conditions
D
*R
DS
DS(on)max
D
D
D
GS
=25V,
=11A
=11A,
=11A
=0/10V,
oss
oss
SPP11N65C3,SPA11N65C3
while V
while V
,
min.
DS
DS
AV
-
-
-
-
-
-
-
-
-
-
-
-
-
-
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
A R
Values
1200
*f.
typ.
390
5.5
5.5
8.3
22
45
30
45
85
10
44
5
5
SPI11N65C3
2007-08-30
max.
60
70
9
-
-
-
-
-
-
-
-
-
-
-
DSS
nC
V
Unit
S
pF
ns
DSS
.
.