FDB8444 Fairchild Semiconductor, FDB8444 Datasheet - Page 2

• Manufacturer Part Number: FDB8444
• Description: MOSFET N-CH 40V 70A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 8035pF @ 25V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0023 Ohms @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8444TR

FDB8444 Rev A2 (W)
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
V
V
I
E
P
T
R
R
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
D
DSS
GSS
DS(
DSS
GS
AS
D
J
VDSS
GS(th)
θJC
θJA
iss
oss
rss
G
Device Marking
g(TOT)
g(TH)
gs
gs2
gd
, T
Symbol
Symbol
on)
STG
FDB8444
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-263, lin
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
FDB8444
Device
Parameter
o
C
T
J
TO-263AB
GS
Parameter
= 25°C unless otherwise noted
Package
T
C
= 10V)
= 25°C unless otherwise noted
I
V
V
V
V
I
I
T
V
f = 1MHz
f = 1MHz
V
V
D
D
D
J
DS
GS
GS
DS
DS
GS
GS
= 250µA, V
= 70A, V
= 70A, V
= 175°C
= 0V
2
= 32V
= V
= 25V, V
= ±20V
= 0 to 10V
= 0 to 2V
Test Conditions
Reel Size
GS
330mm
, I
2
GS
GS
D
copper pad area
GS
GS
= 250µA
= 10V
= 10V,
= 0V,
= 0V
T
V
I
J
DD
D
(Note 1)
(Note 2)
=150°C
= 70A,
= 20V,
Tape Width
24mm
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +175
Ratings
Figure 4
6040
± 20
Typ
480
290
307
167
1.1
0.9
2.6
3.9
91
23
17
20
40
43
70
2
7
7
-
-
-
-
www.fairchildsemi.com
±100
8035
Quantity
800 units
Max
250
640
435
128
5.5
9.9
10
1
4
-
-
-
-
-
Units
Units
W/
o
o
mΩ
nC
nC
nC
nC
nC
C/W
C/W
µA
pF
pF
pF
mJ
nA
o
Ω
W
V
V
V
V
A
C
o
C