FDB8444 Fairchild Semiconductor, FDB8444 Datasheet - Page 6

• Manufacturer Part Number: FDB8444
• Description: MOSFET N-CH 40V 70A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 8035pF @ 25V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0023 Ohms @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8444TR

FDB8444 Rev A2 (W)
Typical Characteristics
Figure 11.
10000
Figure 13.
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
-80
f = 1MHz
V
Normalized Gate Threshold Voltage vs
GS
-40
T
= 0V
V
Junction Temperature
J
DS
Capacitance vs Drain to Source
, JUNCTION TEMPERATURE
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
80
C
RSS
120
(
o
C
V
I
10
D
C
)
GS
OSS
= 250 µ
160
(
V
=
C
)
V
ISS
DS
A
200
50
6
Figure 14.
Breakdown Voltage vs Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
10
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
I
D
Gate Charge vs Gate to Source Voltage
= 70A
= 250
-40
T
20
J
µ
, JUNCTION TEMPERATURE
A
Q
g
0
, GATE CHARGE(nC)
40
V
40
DD
= 15V
80
60
V
DD
120
www.fairchildsemi.com
= 25V
V
80
(
DD
o
C
160
= 20V
)
100
200