FDB8444 Fairchild Semiconductor, FDB8444 Datasheet - Page 4

• Manufacturer Part Number: FDB8444
• Description: MOSFET N-CH 40V 70A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 8035pF @ 25V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0023 Ohms @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8444TR

FDB8444 Rev A2 (W)
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
5000
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
0.01
10
0.1
0
10
2
1
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
SINGLE PULSE
25
DUTY CYCLE - DESCENDING ORDER
D = 0.50
V
T
0.20
0.10
0.05
0.02
0.01
GS
C
, CASE TEMPERATURE
SINGLE PULSE
50
= 10V
Temperature
Figure 3.
10
10
75
-4
-4
100
Normalized Maximum Transient Thermal Impedance
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2.
10
-2
-2
100
80
60
40
20
0
25
Maximum Continuous Drain Current vs
50
10
10
Case Temperature
-1
T
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE
75
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
J
CURRENT LIMITED
BY WIRE
C
I = I
= P
= 25
25
DM
100
o
C
x Z
o
C DERATE PEAK
10
θJC
P
10
DM
175 - T
1
0
/t
0
x R
125
150
2
θJC
www.fairchildsemi.com
C
t
1
+ T
(
o
t
C
2
V
150
C
)
GS
= 10V
10
10
175
1
1