FDB8444 Fairchild Semiconductor, FDB8444 Datasheet - Page 4

MOSFET N-CH 40V 70A TO-263AB

FDB8444

Manufacturer Part Number
FDB8444
Description
MOSFET N-CH 40V 70A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8444

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
128nC @ 10V
Input Capacitance (ciss) @ Vds
8035pF @ 25V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0023 Ohms @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8444TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDB8444
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDB8444 Rev A2 (W)
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
5000
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
0.01
10
0.1
0
10
2
1
10
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
SINGLE PULSE
25
DUTY CYCLE - DESCENDING ORDER
D = 0.50
V
T
0.20
0.10
0.05
0.02
0.01
GS
C
, CASE TEMPERATURE
SINGLE PULSE
50
= 10V
Temperature
Figure 3.
10
10
75
-4
-4
100
Normalized Maximum Transient Thermal Impedance
125
Figure 4. Peak Current Capability
(
o
C
10
)
10
t, RECTANGULAR PULSE DURATION(s)
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2.
10
-2
-2
100
80
60
40
20
0
25
Maximum Continuous Drain Current vs
50
10
10
Case Temperature
-1
T
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE
75
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
J
CURRENT LIMITED
BY WIRE
C
I = I
= P
= 25
25
DM
100
o
C
x Z
o
C DERATE PEAK
10
θJC
P
10
DM
175 - T
1
0
/t
0
x R
125
150
2
θJC
www.fairchildsemi.com
C
t
1
+ T
(
o
t
C
2
V
150
C
)
GS
= 10V
10
10
175
1
1

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