FDB8444 Fairchild Semiconductor, FDB8444 Datasheet - Page 5

• Manufacturer Part Number: FDB8444
• Description: MOSFET N-CH 40V 70A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 128nC @ 10V
• Input Capacitance (ciss) @ Vds: 8035pF @ 25V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0023 Ohms @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB8444TR

FDB8444 Rev A2 (W)
Typical Characteristics
Figure 5.
1000
140
120
100
Figure 9.
100
80
60
40
20
0.1
10
0
14
12
10
1
2.0
Variation vs Gate to Source Voltage
8
6
4
2
Figure 7.
1
4
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
SINGLE PULSE
T
T
DD
J
C
V
V
Forward Bias Safe Operating Area
=
= 25
2.5
DS
= 5V
V
GS
MAX RATED
Drain to Source On-Resistance
GS
, DRAIN TO SOURCE VOLTAGE (V)
5
, GATE TO SOURCE VOLTAGE (V)
o
, GATE TO SOURCE VOLTAGE
C
Transfer Characteristics
I
D
DS(on)
3.0
=
70A
6
T
J
µ
= 175
3.5
s
10
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
7
o
C
4.0
T
J
8
= 175
T
J
T
= 25
J
o
T
4.5
= -55
C
J
o
(
10us
10ms
100us
= 25
9
C
V
1ms
DC
)
o
C
µ
o
s
C
5.0
100
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10.
500
100
Figure 6. Unclamped Inductive Switching
10
140
120
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
1
80
60
40
20
Resistance vs Junction Temperature
0
Figure 8.
-80
0
If R = 0
t
If R ≠ 0
t
AV
AV
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
STARTING T
= (L)(I
= (L/R)ln[(I
V
-40
0.1
DS
T
Normalized Drain to Source On
AS
V
, DRAIN TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE
GS
)/(1.3*RATED BV
t
Saturation Characteristics
AV
V
1
AS
, TIME IN AVALANCHE (ms)
= 5V
GS
J
0
*R)/(1.3*RATED BV
Capability
= 150
= 10V
1
o
40
C
µ
STARTING T
s
DSS
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
10
80
- V
V
GS
DD
DSS
)
V
= 4.5V
GS
- V
120
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V
J
GS
DD
100
= 4V
V
= 25
3
I
D
GS
(
) +1]
= 3.5V
o
= 70A
C
o
= 10V
160
)
C
1000
µ
s
200
4