FDD8580 Fairchild Semiconductor, FDD8580 Datasheet - Page 2

• Manufacturer Part Number: FDD8580
• Description: MOSFET N-CH 20V 35A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8580

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1445pF @ 10V
• Power - Max: 49.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0066 Ohms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 49.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8580TR

FDD8580/FDU8580 Rev. A
Notes:
1: Pulse time < 300μs, Duty cycle = 2%.
2: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
g(5)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.3mH, I
AS
= 21A ,V
Parameter
DD
= 18V, V
T
J
= 25°C unless otherwise noted
GS
= 10V.
I
I
25°C
V
V
V
D
D
V
I
25°C
V
V
V
T
V
V
f = 1MHz
f = 1MHz
V
V
V
V
V
V
I
I
DS
GS
GS
D
F
F
J
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 250μA, V
= 250μA, referenced to
= 35A, di/dt = 100A/μs
= 35A, di/dt = 100A/μs
= 250μA, referenced to
= 175°C
= 0V
= 16V,
= ±20V
= 0V to 10V
= 5V,I
= 10V, V
= 0V to 5V
= 0V, I
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 10V, R
2
Test Conditions
DS
D
, I
S
S
D
D
D
= 35A
= 35A
= 15A
GS
D
D
GS
GS
= 35A
= 35A
= 35A
= 33A
= 250μA
= 0V
= 0V,
= 27Ω
T
V
I
I
D
g
J
DD
= 1.0mA
= 150°C
= 35A
= 10V
Min
20
1.2
1085
17.3
Typ
10.6
0.95
0.85
-6.3
340
205
3.5
3.9
1.8
6.6
9.3
1.3
59
34
19
10
61
11
26
19
7
www.fairchildsemi.com
±100
Max
1445
250
13.0
14.5
1.25
450
310
2.5
9.0
1.2
14
20
94
54
27
14
39
29
1
mV/°C
Units
mV/°C
mΩ
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
Ω
V
S
V