FDD8580 Fairchild Semiconductor, FDD8580 Datasheet - Page 4

• Manufacturer Part Number: FDD8580
• Description: MOSFET N-CH 20V 35A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8580

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1445pF @ 10V
• Power - Max: 49.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0066 Ohms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 49.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8580TR

FDD8580/FDU8580 Rev. A
Typical Characteristics
Figure 11.
100
0.1
500
10
Figure 9.
100
1
1
10
Figure 7.
10
1
0.01
8
6
4
2
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0
LIMITED BY
PACKAGE
V
Forward Bias Safe Operating Area
Unclamped Inductive Switching
DS
0.1
Gate Charge Characteristics
, DRAIN-SOURCE VOLTAGE (V)
t
DS(on)
AV
5
Q
, TIME IN AVALANCHE(ms)
T
g
Capability
J
, GATE CHARGE(nC)
= 150
V
DD
1
SINGLE PULSE
T J = MAX RATED
T C = 25
o
= 7V
C
T
10
J
= 25
O
10
10
C
V
o
DD
C
T
J
= 13V
= 25°C unless otherwise noted
15
T
100
J
V
= 125
DD
100us
10us
1ms
= 10V
10ms
DC
o
C
1000
20
40
4
Figure 8.
Figure 10.
10000
1000
3000
1000
Figure 12. Single
100
60
50
40
30
20
10
100
0
10
25
0.1
10
R
-5
Capacitance vs Drain to Source Voltage
θ
Maximum Continuous Drain Current vs
SINGLE PULSE
JC
= 3.03
50
V
10
DS
V
T
Case Temperature
-4
GS
, DRAIN TO SOURCE VOLTAGE (V)
C
o
, CASE TEMPERATURE
C/W
= 10V
t, PULSE WIDTH (s)
Dissipation
75
10
CURRENT LIMITED
BY PACKAGE
-3
Pulse Maximum Power
V
1
GS
100
T
10
C
C
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
= 4.5V
C
oss
V
I = I
rss
iss
-2
= 25
GS
25
= 10V
o
125
C
10
o
C DERATE PEAK
www.fairchildsemi.com
175 T
---------------------- -
-1
(
o
150
C
–
)
150
f = 1MHz
V
C
10
GS
0
= 0V
10
175
10
20
1