FDD8580 Fairchild Semiconductor, FDD8580 Datasheet - Page 5

• Manufacturer Part Number: FDD8580
• Description: MOSFET N-CH 20V 35A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8580

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1445pF @ 10V
• Power - Max: 49.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0066 Ohms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 49.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8580TR

FDD8580/FDU8580 Rev. A
Typical Characteristics
0.005
0.01
0.1
2
1
10
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-4
Figure 13. Transient Thermal Response Curve
T
J
= 25°C unless otherwise noted
t, RECTANGULAR PULSE DURATION (s)
10
-3
5
10
-2
10
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
θJC
10
P
DM
1
/t
0
x R
2
www.fairchildsemi.com
θJC
t
1
+ T
t
2
C
10
1