FDD8580 Fairchild Semiconductor, FDD8580 Datasheet - Page 3

• Manufacturer Part Number: FDD8580
• Description: MOSFET N-CH 20V 35A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8580

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1445pF @ 10V
• Power - Max: 49.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0066 Ohms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 49.5 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8580TR

FDD8580/FDU8580 Rev. A
Typical Characteristics
Figure 3.
120
100
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
Figure 1. On Region Characteristics
-80
0
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
D
Normalized On Resistance vs Junction
GS
V
= 35A
DD
T
-40
= 10V
J
T
V
= 5V
V
= 25
J
GS
DS
, JUNCTION TEMPERATURE
2
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
o
1
T
C
V
Temperature
J
0
GS
= 175
= 10V
o
3
40
C
V
μ
s
GS
2
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
J
= 4.5V
= - 55
80
T
4
J
o
= 25°C unless otherwise noted
C
120
3
(
o
V
V
C
5
GS
GS
)
160
= 4.0V
= 3.5V
μ
s
200
4
6
3
Figure 2. Normalized
Figure 4.
1E-3
0.01
Figure 6.
200
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
25
20
15
10
1
5
0.0
0
2
V
T
GS
J
V
I
D
= 175
SD
Voltage vs Source Current
0.2
Current and Gate Voltage
= 0V
= 35A
V
20
On-Resistance vs Gate to Source
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
GS
o
, GATE TO SOURCE VOLTAGE (V)
C
I
D
0.4
, DRAIN CURRENT(A)
4
V
GS
40
= 3.5V
Voltage
0.6
On-Resistance vs Drain
0.8
60
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
J
GS
= -55
T
J
T
T
1.0
= 4.0V
= 175
J
J
= 25
= 25
80
o
C
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o
o
o
C
1.2
C
C
8
V
100
V
GS
GS
1.4
= 4.5V
= 10V
μ
μ
s
s
120
1.6
10