FDT434P Fairchild Semiconductor, FDT434P Datasheet - Page 3
![MOSFET P-CH 20V 6A SOT-223](/photos/5/57/55707/fdt434p_sml.jpg)
FDT434P
Manufacturer Part Number
FDT434P
Description
MOSFET P-CH 20V 6A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Specifications of FDT434P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1187pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Drain Current (max)
6A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Continuous Drain Current Id
6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-600mV
Transistor Case Style
SOT-223
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDT434P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDT434P
Manufacturer:
FSC
Quantity:
35 000
Part Number:
FDT434P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDT434P Rev. C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
15
12
9
6
3
0
1.6
1.4
1.2
0.8
0.6
0.9
20
16
12
1
8
4
0
-50
V
0
Figure 1. On-Region Characteristics.
DS
V
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
GS
V
I = - 6 A
= -5V
D
= -4.5V
GS
-25
1.2
= - 4.5V
-V
1
GS
T , JUNCTION TEMPERATURE (°C)
withTemperature.
-V
0
J
, GATE TO SOURCE VOLTAGE (V)
-3.0V
DS
1.5
, DRAIN-SOURCE VOLTAGE (V)
25
2
1.8
-2.5V
50
T = -55°C
J
3
75
2.1
-2.0V
125°C
100
4
2.4
25°C
125
-1.5 V
2.7
150
5
Figure 6. Body Diode Forward Voltage Variation
3
0.15
0.12
0.09
0.06
0.03
0.001
0.01
1.8
1.6
1.4
1.2
0.8
0.1
15
0
1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
= 0V
0.2
= -2.5V
-V
Gate-to-Source Voltage.
- V
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
2
-3.0V
5
0.4
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
J
- I , DRAIN CURRENT (A)
D
-3.5V
0.6
25°C
3
-55°C
10
T =125°C
0.8
A
-4.0V
25°C
1
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4
15
I
D
-4.5V
= -6 A
1.2
1.4
5
20