FDT434P Fairchild Semiconductor, FDT434P Datasheet - Page 3

• Manufacturer Part Number: FDT434P
• Description: MOSFET P-CH 20V 6A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDT434P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1187pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDT434P

FDT434P Rev. C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
15
12
9
6
3
0
1.6
1.4
1.2
0.8
0.6
0.9
20
16
12
1
8
4
0
-50
V
0
Figure 1. On-Region Characteristics.
DS
V
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
GS
V
I = - 6 A
= -5V
D
= -4.5V
GS
-25
1.2
= - 4.5V
-V
1
GS
T , JUNCTION TEMPERATURE (°C)
withTemperature.
-V
0
J
, GATE TO SOURCE VOLTAGE (V)
-3.0V
DS
1.5
, DRAIN-SOURCE VOLTAGE (V)
25
2
1.8
-2.5V
50
T = -55°C
J
3
75
2.1
-2.0V
125°C
100
4
2.4
25°C
125
-1.5 V
2.7
150
5
Figure 6. Body Diode Forward Voltage Variation
3
0.15
0.12
0.09
0.06
0.03
0.001
0.01
1.8
1.6
1.4
1.2
0.8
0.1
15
0
1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0
0
V
V
Drain Current and Gate Voltage.
GS
GS
= 0V
0.2
= -2.5V
-V
Gate-to-Source Voltage.
- V
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
2
-3.0V
5
0.4
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
J
- I , DRAIN CURRENT (A)
D
-3.5V
0.6
25°C
3
-55°C
10
T =125°C
0.8
A
-4.0V
25°C
1
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4
15
I
D
-4.5V
= -6 A
1.2
1.4
5
20