FDT434P Fairchild Semiconductor, FDT434P Datasheet - Page 4

• Manufacturer Part Number: FDT434P
• Description: MOSFET P-CH 20V 6A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDT434P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1187pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDT434P

©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
Typical Characteristics
5
4
3
2
1
0
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
I
1
Figure 7. Gate Charge Characteristics.
0.001
D
0.1
0.01
0.1
= -6.0A
1
0.001
R
SINGLE PULSE
DS(ON)
R
V
θJA
T
GS
= 110
A
3
= -4.5V
= 25
LIMIT
D = 0.5
o
o
C/W
C
-V
0.2
0.05
0.02
0.1
0.01
Q
DS
Single Pulse
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
6
0.01
DC
10s
V
Figure 11. Transient Thermal Response Curve.
DS
1s
9
= -5V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
10ms
-10V
10
-15V
100 µ s
12
0.1
15
100
t
1
, TIME (sec)
4
1
200
160
120
1800
1600
1400
1200
1000
80
40
800
600
400
200
0.0001
0
Figure 8. Capacitance Characteristics.
0
0
Figure 10. Single Pulse Maximum
0.001
2
C
Power Dissipation.
-V
RSS
10
DS
0.01
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
4
C
0.1
OSS
6
1
P(pk)
Duty Cycle, D = t
C
T
R
100
ISS
R
J
θJA
- T
θJA
8
(t) = r(t) * R
A
10
= 110 °C/W
t
1
SINGLE PULSE
R
www.fairchildsemi.com
= P * R
t
2
θ JA
T
V
f = 1MHz
A
= 110
GS
= 25
10
100
= 0 V
θJA
o
o
1
θJA
C
C/W
(t)
/ t
2
1000
1000
12